肖特基p-GaN栅极功率HEMT的正向阈值电压漂移：对温度、偏置和栅极漏电流的依赖性

In this article, we present an extensive analysis of the positive threshold voltage instability in Schottky p-GaN gate enhancement-mode devices, investigated by a custom setup allowing an extended observation window, from the microsecond to hundreds of seconds. We show that a matrix of experiments can be specifically designed to investigate the voltage, temperature and leakage dependence of the th...