基于电路法的P-Gate GaN HEMT栅极鲁棒性与可靠性评估

The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the dc bias stress or pulse I–V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This article develops a new circuit method to char...