桥臂电路中肖特基型p-GaN栅HEMT漏极相关阈值电压漂移及误导通分析

To assess GaN power transistors’ capability to maintain a decent enhancement-mode operation under high voltage switching operation, the impact of negative threshold voltage (Vth) shift on false turn-on of the Schottky-type p-GaN gate high-electron mobility transistor (HEMT) is analyzed. The negative Vth shift of the device at high VDS is firstly investigated by pulsed IV measurement. A customized ...