基于改进型GaN HEMT模型的GaN基TCM变换器死区时间能量损耗分析

For gallium nitride (GaN) based triangular current mode (TCM) applications, the dead-time has a significant effect on the switching loss. However, previous GaN high electron mobility transistor (HEMT) models focus on the turn-on/off process without fully considering the effect of the dead-time. Hence, this article analyzes the switching transients under the superfluous and insufficient dead-time a...