一种具有钳位功能的GaN器件栅源电压振荡抑制方法

Gallium nitride (GaN) devices are generally more prone to severe switching oscillations than Si mosfets due to their fast switching speeds. Different from Si and SiC mosfets, GaN devices typically have a lower maximum gate voltage rating. Taking the Efficient Power Conversion Corporation series as an example, the gate drive voltage is usually 5 V, but the maximum voltage rating is 6 V. Therefore, ...