一种新型集成门极换流晶闸管多级门极驱动单元

Integrated gate commutated thyristor is developing toward larger size and higher turn-off current, so its gate unit is also required to have larger turn-off capability and higher commutation speed. Limited by the parasitic impedance and the 20-V constant gate voltage, the conventional gate unit is approaching the limit of its commutation capacity. A novel multistage gate unit concept and its contr...