共源共栅GaN HEMT在高频软开关应用中输出电容损耗的起源

Output capacitance (COSS) loss (EDISS) is produced when the COSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the lar...