IGBT建模中栅漏重叠氧化层电容数据手册驱动提取方法的比较与优化

Extracting gate-drain overlap oxide capacitance (Coxd) is a necessary step for almost all kinds of insulated-gate bipolar transistor (IGBT) compact models. There are two datasheet-driven methods that are universally accepted, one is based on reverse capacitance voltage characteristics (C–V method), and the other uses gate charge characteristics (Q–V method). This letter is to reveal the underlying...