用于改善电压调节器瞬态响应的GaN器件驱动控制

With the continuous development of microprocessors, more stringent voltage regulation requirements have been put forward for the voltage regulators (VR) in the transient process. This letter proposes a driving control method for gallium nitride (GaN) devices to improve the transient response of the VR. When the GaN device conducts reverse, its source-drain voltage can be controlled by its gate vol...