p-GaN HEMT在低温下的非钳位感性开关行为

In this letter, the unclamped-inductive-switching (UIS) behaviors of GaN-based high-electron-mobility transistors with p-type GaN gate (p-GaN HEMTs) at cryogenic temperature (CT) are first revealed. Unlike the temperature-dependent avalanche-induced failure for SiC devices during UIS process, the withstanding behaviors and final critical breakdown voltage of p-GaN HEMT during UIS process at CT are...