一种基于SenseHEMT的GaN功率HEMT集成过流保护电路

GaN power high-electron-mobility transistors (HEMTs), with their fast switching transients and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can respond in under $\text{0.5}\, \mu \text{s}$. Monolithically integrating digital and analog circuits with GaN power devices is enabled by recent advancements in high-voltage GaN integrationplatforms. Thus, integrated OCP d...