共源共栅GaN HEMT的自持关断振荡：发生机理、不稳定性分析及振荡抑制

This article presents a comprehensive study on the occurrence mechanism, instability analysis, and suppression methods of self-sustained turn-off oscillation, which occurs on cascode gallium nitride high electron mobility transistors (cascode GaN HEMTs). In the beginning, the oscillation waveforms are analyzed, which indicate that the occurrence of the oscillation is determined by test circuit ins...