基于GaN的Buck变换器死区时间优化

A gallium nitride (GaN) field effect transistor can provide superior performance over a Si-mosfet due to its low on-state resistance and low junction capacitances. However, a GaN-based converter exhibits higher dead time loss during reverse conduction. Thus, to improve the efficiency, dead time optimization is required. This article proposes simple models for dead time optimization in a GaN-based ...