重复短路应力下P-GaN HEMT电参数退化研究

In this letter, comprehensive static and dynamic electrical parameter degradations of p-GaN gate high electron mobility transistor (HEMT) under repetitive short-circuit (SC) stresses are presented. Meanwhile, the mechanisms behind those degradations are first distinguished. The results indicate that both the gate region and the access region are damaged by the SC stresses, dominating the shifts of...