p-GaN栅极功率HEMT开关运行下动态关断漏电流的物理经验模型

In this article, an empirical model of dynamic off-state leakage current (IOFF) under switching operation in p-GaN gate high-electron-mobility transistors is established based on its underlying physical mechanism. The impacts of relevant switching conditions, including switching frequency, duty cycle, off-state delay time, gate drive voltage, and temperature are all considered in the modeling of d...