GaN器件的持续振荡建模及其定量抑制方法

Gallium nitride (GaN) devices are widely used due to their excellent performance when integrated into power electronics applications. However, owing to their low parasitic parameters and fast switching speed, they are more prone to instability than the silicon devices. The sustained oscillation discussed in this article is one of the instability problems, which may result in overshoot or even more...