射频应力下SiC衬底AlGaN/GaN HEMT的可靠性评估

This article reports a reliability study on AlGaN/GaN high-electron-mobility transistors under the RF stress. It shows a stabilization of the gate contact after the aging test. However, the degradation of RF performances and dc parameters is noticed. The degradations are mainly due to bulk traps located between gate-source or gate-drain and caused by hot-electron effects. The trap-related phenomen...