用于电流源零电压开关变换器的3.3 kV反向阻断SiC模块特性研究

Silicon carbide (SiC) MOSFETs with ratings of 3.3 to 15 kV represent a dramatic improvement over available silicon devices, enabling the realization of medium-voltage converters in demanding applications such as solid-state transformers. Typical voltage-source converter configurations realize significant reduction in switching loss with SiC devices, but high dv/dt of 30-50 kV/μs generates high lev...