一种解决GaN同步降压变换器串扰问题的负压衰减栅极驱动电源

Gallium-Nitride (GaN) transistor suits for high switching frequency condition to build high power density converters. However, it suffers from crosstalk problem especially in bridge-structure applications, that is, the fast voltage changing of the switching node causes a positive or negative voltage spike on the gate-source voltage of GaN transistor, which results in false turn-on and gate breakdo...