650V p-GaN HEMT单脉冲非钳位电感开关

This letter firstly reveals the single pulse unclamped-inductive-switching (UIS) withstanding physics and failure mechanism for p-GaN high electron mobility transistor (HEMT) with Schottky type gate contact. Unlike silicon/silicon carbide (Si/SiC)-based devices, the p-GaN HEMT withstands the surge current from load inductor by storing the energy into the output capacitance of the device, rather th...