硅基氮化镓异质结构的压电特性及其对开关运行寿命的影响

Due to the intrinsic piezoelectric nature of gallium nitride (GaN), devices manufactured with such technology are in principle prone to experience electromechanically induced resonance phenomena during cyclic switching operation. We will outline an approach to model the mechanical resonance in a GaN-on-Si test heterostructure and evaluate the implication of the stresses in the resonance case. A re...