基于碳化硅、硅和蓝宝石衬底的氮化镓高电子迁移率晶体管的最大、有效和平均热阻

Abstract The maximum, effective, and average thermal resistance ( R TH ) of AlGaN/GaN and InAlN/GaN high-electron mobility transistors (HEMTs) on silicon carbide (SiC), silicon (Si), and sapphire substrates are reported using TCAD simulation. After validating simulated I-V properties, R TH is deduced from self-heating (SH)-induced rise in channel temperature (Δ T ) versus dissipated power ( P D ) plot. The maximum thermal resistance ( R THmax ) determines HEMT reliability at higher power dissipation; so, peak channel temperature ( T max ) is extracted. The simulated Δ T max - P D plots are compared with the literature results for each HEMT structure. The estimated R THmax is consistent with the reported experimental values, verifying the TCAD model and confirming the validity of reported R TH values. The effective thermal resistance ( R THeff ) is needed to simulate the electrical properties using the compact model. For this purpose, isothermal I DS - V DS simulations are carried out at different temperatures without SH effects. Then, the cross-over temperature points (Δ T eff ) are identified by evaluating the isothermal data with the actual output properties at a particular P D . The average thermal resistance ( R THavg ) of the HEMT is computed by averaging the lattice temperature profile along the channel (mean channel temperature), and R THavg is compared with R THeff .