高频功率变换器中GaN器件反向与正向导通下动态导通电阻的精确测量

Because of trapped charges in GaN transistor structure, device dynamic on-state resistance $R_\mathrm{DSon}$ is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce its turn-on switching losses. When GaN transistor finishes ZVS during one switching period, device has been operated under both revers...