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高频下GaN器件频率相关导通电阻的表征与建模

Characterization and Modeling of Frequency-Dependent On-Resistance for GaN Devices at High Frequencies

作者 Kangping Wang · Bingyang Li · Hongchang Li · Xu Yang · Aici Qiu
期刊 IEEE Transactions on Power Electronics
出版日期 2020年5月
技术分类 功率器件技术
技术标签 GaN器件 宽禁带半导体 功率模块 可靠性分析
相关度评分 ★★★★ 4.0 / 5.0
关键词 GaN 器件 导通电阻 高频 功率变换器 特性分析 建模 开关频率
语言:

中文摘要

随着GaN基功率变换器开关频率向兆赫兹级别迈进,GaN器件在高频下的导通电阻显著高于其直流值,尤其是低导通电阻器件。本文通过电气和热学实验,深入研究了导通电阻的频率相关特性,并建立了相应的表征与建模方法,为高频电力电子系统的设计提供了理论支撑。

English Abstract

The switching frequencies of the GaN-based power converters have been pushed to several megahertz and even higher. At such high frequencies, the on-resistances of the GaN devices might be much higher than their dc values, especially for the devices with low on-resistances. The frequency-dependent characteristics of the on-resistance are studied through the electrical and thermal experiments for th...
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SunView 深度解读

随着光伏逆变器和储能PCS向高功率密度和高开关频率方向发展,GaN器件的应用潜力巨大。该研究揭示了GaN器件在高频下的导通电阻损耗机理,对阳光电源优化户用光伏逆变器及小型化储能变流器(PCS)的效率设计至关重要。建议研发团队在进行高频拓扑选型时,引入该频率相关模型进行损耗仿真,以更精准地评估热设计边界,提升产品在极端工况下的可靠性与转换效率。