IGBT开关引起的辐射干扰特性及影响因素研究

Characteristics and Influence Factors of Radiated Disturbance Induced by IGBT Switching

作者	Jian Zhang · Tiebing Lu · Weidong Zhang · Xingming Bian · Xiang Cui
期刊	IEEE Transactions on Power Electronics
出版日期	2019年12月
技术分类	功率器件技术
技术标签	IGBT 功率模块可靠性分析电磁干扰EMI
相关度评分	★★★★★ 5.0 / 5.0
关键词	IGBT 辐射骚扰电磁干扰 (EMI) 辅助电路开关特性电力电子

语言:

中文摘要

本文建立了IGBT及其辅助电路的辐射干扰测试平台，实验研究了辅助电路的辐射干扰特性及抑制方法。研究发现，辅助电路的辐射电磁干扰（EMI）带宽主要集中在30-300 MHz范围内。

English Abstract

The setup for testing radiated disturbance induced by insulated gate bipolar transistor (IGBT) and auxiliary circuits was established. The radiated disturbance characteristics of auxiliary circuits and methods to suppress the radiated electromagnetic interference (EMI) were experimentally studied. The radiated EMI bandwidth of the auxiliary circuit was concentrated in the range 30-300 MHz. The mat...

SunView 深度解读

该研究对阳光电源的核心产品线（如组串式/集中式光伏逆变器、PowerTitan储能系统）具有重要意义。随着功率密度提升，IGBT开关频率及dv/dt增加，电磁兼容性（EMC）设计成为产品认证与稳定运行的关键。研究中关于30-300 MHz频段辐射干扰的分析，可直接指导研发团队优化逆变器及PCS的PCB布局、驱动电路设计及屏蔽方案，有效降低EMI风险，提升iSolarCloud运维环境下的系统电磁兼容可靠性，确保产品在复杂电网环境下的稳定运行。