GaN与BCD技术的异构集成及其在高转换比DC-DC升压变换器IC中的应用

This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing,...