一种用于检测快速GaN器件开关电流的高带宽集成电流测量方法

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the switching current. However, GaN devices have a fast switching speed and are sensitive to parasitic parameters, so the current measurement should h...