基于脉冲信号开通延迟的功率MOSFET结温测量方法

This paper proposes a novel method for junction temperature measurement of power metal-oxide-semiconductor field-effect transistors (mosfets). The measurement method is using the turn-on delay of impulse signal, which is the delay time between the rising edge of impulse signal and the corresponding rising edge of drain-source current. Results show that the turn-on delay has a good linear relations...