用于评估GaN开关热应力和关断电压应力的动态导通电阻

GaN power switches provide remarkable performance in terms of power-density, reduced parasitics, and high-thermal handling capability that enable the realization of very efficient and compact dc/dc converters. Despite exhibiting state-of-the-art channel conductivity, GaN high electron mobility transistor (HEMT) devices are affected by the degradation of the dynamic ON-Resistance (RON) at increasin...