半桥电路中增强型氮化镓器件的不稳定性分析与振荡抑制

This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The instability may cause sustained oscillation, resulting in overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate in the saturation region when they conduct reversely during the dead time. Under the influence of paras...