考虑任意结电容梯度系数的MOSFET非线性漏源及栅漏电容的E类功率放大器设计

This paper presents theory and analysis for class-E power amplifier considering MOSFET nonlinear gate-to-drain and nonlinear drain-to-source capacitances at any grading coefficient of the MOSFET body junction diode. The nonlinearity degree of a MOSFET parasitic capacitance is determined by the grading coefficient. When the grading coefficient is not considered in design procedure, the switch volta...