1100 V、600 A/cm² 4H-SiC 横向IGBT

This work demonstrates a 1100 V 4H-SiC Lateral IGBT with high current capability on N-sub/N-epi stack. It features a lightly doped drift region protected by P-top and obtains a remarkable current density of 600 A/cm ${}^{\mathbf {{2}}}$ . The low doping concentration makes the conductivity modulation effect in the drift region more pronounced. The electric field crowding effect at the gate corner is relieved by the P-top. Field limiting rings (FLRs) are also adopted to improve the vertical $\mathbf {\textit {BV} }$ . This device realizes the best $\mathbf {\textit {BV} }$ and $\mathbf {I}_{\mathbf {\textit {sat}}}$ trade-off among 4H-SiC lateral power devices.