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储能系统技术 储能系统 SiC器件 构网型GFM ★ 5.0

电压控制变换器高带宽零超调性能的直接控制器设计

A Straightforward Controller Design of Voltage-Controlled Converters for High-Bandwidth and Zero-Overshoot Performance

作者 Jiaxing Lei · Jialiang Liu · Guoju Zhang · Xuefeng Ge · Shuang Feng · Yuyang Ji
期刊 IEEE Journal of Emerging and Selected Topics in Power Electronics
出版日期 2025年1月
技术分类 储能系统技术
技术标签 储能系统 SiC器件 构网型GFM
相关度评分 ★★★★★ 5.0 / 5.0
关键词 电压控制 电压控制型变流器 控制器设计 闭环传递函数 控制性能
语言:

中文摘要

针对电压控制变换器(VCC)独立和构网型(GFM)运行的高稳态和动态性能需求,提出配LC滤波器VCC的高带宽零超调直接控制器设计。控制器由外环PI控制器和内环状态反馈(SF)控制器组成。考虑数字延迟构建复系数精确离散传递函数,从极零点位置直接确定期望闭环传递函数。通过等价传递函数获得内环极点和PI参数,然后通过简单极点配置计算内环SF控制参数。设计适当传递函数可轻松实现优越控制性能。SiC MOSFET样机实验证明所提方法优越性,带宽达5kHz,稳定时间小于0.2ms且无超调。

English Abstract

Voltage control with high steady-state and dynamic performances is crucial for the stand-alone and grid-forming (GFM) operations of voltage-controlled converters (VCCs). To achieve high-bandwidth and zero-overshoot performance, this article proposes a straightforward controller design for the VCCs with an output LC filter. The controller is composed of an outer proportional-integral (PI) controller and an inner state-feedback (SF) controller. The accurate discrete transfer function G _c (z) with complex coefficients is first constructed, considering the digital delay. Besides, the desired closed-loop transfer function G _ obj (z) is directly determined from its pole and zero locations. The inner loop poles and PI parameters can thus be obtained by equating G _c (z) and G _ obj (z). After that, the inner SF control parameters can be calculated by simple pole placement. Therefore, by designing appropriate G _ obj (z), superior control performance can be easily achieved. The effects of sampling delay and noise on the performance are discussed, which can be evaded by selecting the poles of G _ obj (z). The current and voltage limiters are adopted to consider the inherent physical limitation of the converters. Besides, the analysis shows that the proposed method is highly robust to parameter variations. Experimental results on a SiC-MOSFET-based prototype demonstrate the superiority of the proposed method. The bandwidth reaches 5 kHz, and the settling time is less than 0.2 ms without any overshoot.
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SunView 深度解读

该高带宽零超调电压控制技术对阳光电源构网型变换器有重要性能提升价值。直接控制器设计方法可应用于ST储能变流器的构网型GFM控制,实现5kHz高带宽和0.2ms快速响应,提高电网支撑能力。SiC MOSFET应用经验对阳光电源SiC功率器件产品线的高频控制算法开发有借鉴意义。该技术对PowerTitan大型储能系统的电压质量优化和动态响应改善有参考价值,可提升系统在弱电网和孤岛模式下的稳定性和鲁棒性。