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储能系统技术 储能系统 GaN器件 ★ 5.0

基于负载导向通用设计方法的甚高频Class E逆变器性能评估

Performances Assessment of Very High-Frequency Class E Inverters Based on a Load-Oriented Generic Design Method

作者 Matthieu Beley · Loris Pace · Arnaud Bréard
期刊 IEEE Journal of Emerging and Selected Topics in Power Electronics
出版日期 2025年4月
技术分类 储能系统技术
技术标签 储能系统 GaN器件
相关度评分 ★★★★★ 5.0 / 5.0
关键词 E类逆变器 通用设计方法 可视化工具 无线电力传输 GaN HEMT
语言:

中文摘要

Class E逆变器因驱动简单、效率高且元件数量少,广泛应用于甚高频功率变换领域。本文提出一种适用于任意负载阻抗、输出功率和开关频率的通用设计方法,并引入可视化工具辅助设计者确定最优工作点。根据不同应用需求,可对多个工作点的性能进行评估。以40.68 MHz、50 W、5 Ω无线功率传输负载为例,设计三种满足相同指标的方案,制作样机并实验验证。充分考虑氮化镓高电子迁移率晶体管(GaN HEMT)的非线性输出电容特性,实测逆变器在额定工作点的效率达到87.7%至89.8%。

English Abstract

Class E inverters are widely used in very high-frequency power converters due to their ease of driving, their high efficiency, and their low component count. A generic design method applicable to arbitrary load impedance, output power, and switching frequency is presented. The newly introduced visual tool is a support for designers to identify an optimal operating point. Depending on the application requirements, different operating points can be evaluated in terms of their performances. The method is carried out with three scenarios complying with the same requirements: 40.68 MHz, 50 W, and a 5- wireless power transfer (WPT) load. The different designs are then compared and three prototypes are implemented and characterized to validate the method. The nonlinear output capacitance of the gallium nitride high electron mobility transistor (GaN HEMT) is entirely functionalized. The attained inverter efficiencies at the nominal operating points are measured between 87.7% and 89.8%.
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SunView 深度解读

该甚高频Class E逆变器通用设计方法对阳光电源GaN器件应用具有重要参考价值。文中针对GaN HEMT非线性输出电容特性的建模与优化设计思路,可直接应用于ST储能变流器和SG光伏逆变器的高频化设计,提升功率密度。40.68MHz频率下87.7%-89.8%的效率表现,验证了负载导向设计方法的有效性,该方法可移植到车载OBC充电机的谐振变换级设计中,优化不同负载阻抗下的工作点选择。可视化设计工具理念对阳光电源功率模块设计平台建设具有启发意义,有助于建立面向多应用场景的GaN/SiC器件参数化设计库,加速新产品开发周期。