面向全碳化硅电压源变换器中不同导通电阻的肖特基势垒二极管选型

In Silicon Carbide based voltage source converters (VSCs), pairing Schottky barrier diodes (SBDs) presents trade-offs. While SBDs reduce the freewheeling loss and mitigate the adverse effects of bipolar conduction, their junction capacitance also contributes to increased switching loss. This paper proposes a systematic selection strategy for SBDs aimed at enhancing converter efficiency, using on-resistance as the design variable. A three-phase VSC with 1.2 kV MOSFETs and four sets of 1.2 kV SBDs is demonstrated as the case study. The static and switching characteristics for MOSFET/SBD pair are measured and analyzed over a wide temperature range. VSC efficiency is evaluated in both inverter and rectifier modes under different operating conditions. It appears that VSC using SBDs with 126% of the MOSFETs’ resistance exhibits an overall superior performance. A 4 kW full-SiC VSC prototype is developed to validate the proposed selection strategy. Compared to other SBDs, using the recommended selection enhances VSC efficiency by up to 2% (± 0.5% ) under light loads while maintaining high performance under medium and heavy loads. Compared to freewheeling by the body diode, using the recommended selection enhances VSC efficiency by an average of 0.4% (± 0.1% ) across nearly the entire load range.