高功率器件封装中含重铸层和粗糙界面的陶瓷通孔互连结构热力学分析

The thermomechanical behavior of through ceramic via (TCV) interconnect structure significantly influences the three-dimensional package reliability. However, existing studies have largely overlooked the pivotal role of defects induced by laser drilling—specifically recast layers and rough interfaces—on the regulation of thermal stresses in high-power devices. In this work, a novel thermodynamic analysis of TCV interconnect structure incorporating the recast layers and rough interfaces was proposed. A ceramic-recast layer-copper model with tunable interface roughness was established employing the Weierstrass-Mandelbrot (W-M) fractal function. The experimental results agree well with the simulation results, with a maximum error of only 11.1%. The thermodynamic simulation results reveal a nonmonotonic relationship between thermal stress and interfacial roughness: thermal stress first decreases, reaching a minimum at 0.2 μm roughness across all temperatures (200 ~ 500°C), before increasing with additional roughness. Thermal deformation decreases slightly with increasing roughness. Further analyses demonstrate that the aforementioned laws are consistent both with and without a recast layer and across varying TCV aspect ratios (AR = 3.13 ~ 8.33), thereby substantiating the model’s universality. This study establishes quantitative correlations between process-induced defects and thermomechanical performance, offering insights for optimizing laser drilling parameters and TCV structural designs in high-density 3D packaging applications.