氮化镓高电子迁移率晶体管中的低温捕获效应：铁掺杂缓冲层和场板的影响

This article investigates trapping mechanisms in AlGaN/GaN high electron mobility transistors (HEMTs) at cryogenic temperatures (CTs) down to 4.2 K, using pulsed I–V and drain current transient spectroscopy (DCTS) measurements. The results revealed an overall increase of trapping effects at CT. In particular, a substantial increase in current collapse at low temperatures was observed and predominately ascribed to deep acceptor states stemming from the iron (Fe)-doped GaN buffer. In contrast, devices with undoped buffer presented limited signs of trapping, which were only linked to surface and access regions. The aggravation at low temperatures of trapping effects was linked to a slower detrapping dynamic at low temperatures. Furthermore, the incorporation of gate field plates (FPs) led to a substantial attenuation of trapping and reduction of current collapse by a factor of 2.6 at CT in Fe-doped devices. These latter features were ascribed to the ability of the FP to decrease the electrical field along the device, highlighting the increased impact of FP at CTs. The results suggest that an undoped buffer with optimized gate FP could help to improve the reliability of GaN devices at low temperatures.