基于2英寸β-Ga2O3晶圆无金工艺制备的大面积肖特基势垒二极管的统计研究

This study reports a statistical study and the fabrication of large-area ( 3 3 mm2) Schottky barrier diodes (SBDs) on 2-in -Ga2O3 epitaxial wafer, utilizing an industry-compatible and cost-effective gold-free processes. The proposed diode structure integrates implanted edge termination (ET) and low-doped rings (LDRs), which can effectively manage the electric field distribution. The SBDs simultaneously achieved a best-performance breakdown voltage (BV) of exceeding 1300 V and a forward current ( I _F ) of over 10 A at 2 V, representing a well performance among all reported large-area SBDs with I _F 5 A. Furthermore, the devices exhibited a maximum repetitive BV of over 700 V at I _R ,, = 100~ A. Additionally, we conducted a statistical performance analysis of the 3 3 mm2 SBDs across the entire wafer. The SBDs have an average repetitive BV of 347 V; 12.5% of the SBDs have a repetitive BV exceeding 650 V, 43.1% fall within the range of 350–650 V, and 44.4% have a repetitive BV below 350 V. Also, we have investigated the causes of variations in the forward and reverse characteristics of devices with the same structure, as well as the relationships between fluctuations in certain physical parameters. This analysis provides valuable insights for future wafer-level processing in industrial applications. This work demonstrates the significant potential of these SBDs for next-generation industrial-grade and low-cost high-power devices.