基于N端口测量的碳化硅功率模块寄生参数提取方法

This article presents a measurement-based methodology focused on the parasitic extraction of RL elements involved in the commutation power loop of silicon carbide (SiC)-based power modules. It can be seen as a closed/semi-closed-box model that considers a set of scattering-parameters (S-Parameters) measurements for a given number of ports (N) externally available in a power module under test. The proposed approach allows us to build, in some hours, a model intended to be a behavior representation as close as possible to the physics of the power module. Uncertainties and errors of measurement are managed by optimization regression algorithm based on least-square using the Gauss–Newton–Raphson method. Experimental results using a SiC-based power module with different samples are presented for validation purposes.