一种改进的串扰抑制驱动拓扑用于相腿结构中具有快速开关瞬态的SiC MOSFET

Power converters composed of SiC mosfets with fast switching transients are widely used in high-performance, high-power applications. Wide bandgap semiconductor devices with high switching frequencies in the driver circuits are highly susceptible to the gate–source crosstalk voltages during fast switching transients, which can lead to mis-conductance and shoot through phenomena in complementary bridge arms. In this article, an improved crosstalk suppression gate–source driver topology based on transistors and passive components is proposed to effectively suppress the crosstalk issues of the voltage source inverters. It does so without compromising the performance of SiC power devices by strategically putting the auxiliary circuits into or removing them out of the gate–source driver circuits as necessary, ensuring the normal operation is maintained. Additionally, the auxiliary transistors can flexibly adjust their operating modes according to the crosstalk patterns in the gate–source driver circuits without the need for extra control signals or external excitation. The improved driver circuit uses transistors and passive components for crosstalk suppression, which enhances the reliability of the drive system to a certain extent. Finally, the feasibility and effectiveness of the improved crosstalk suppression driver topology are verified by simulations and experiments.