基于6英寸Si衬底的高RF性能AlGaN/GaN HEMT用于低压应用

In this letter, AlGaN/GaN high electron mobility transistors (HEMTs) on a 6-inch Si substrate with excellent RF performance are presented for low voltage applications. Using regrown n+-InGaN ohmic contacts by metal-organic chemical vapor deposition, the ohmic contact resistance achieves an average value of 0.08~ mm on the whole wafer. With a gate length of 220 nm and a source-drain spacing of 2.2~ m, the device exhibits a saturation current of up to 1689 mA/mm and a peak transconductance of 436 mS/mm. Once the wafer was thinned to 100~ m, 3.6 GHz load-pull measurements for the HEMT with gate width ( W_ g ) of 2 100~ m at low drain voltages ( V_ d ) of 5-15 V indicate that the device exhibits maximum output power densities ( P_ {out, {max}} ) of 0.86-4.35 W/mm and peak power added efficiencies (PAE) of 63.96%-66.23%, which are the highest output power density and PAE from AlGaN/GaN HEMTs at the same operating voltage level in sub-6GHz. Furthermore, the HEMT with W_ g of 8 125~ m also shows high PAE of 60.4%/61.19% and P_ {out, {max}} of 0.56/0.75 W/mm at V_ d =5 /6 V. The excellent properties of these AlGaN/GaN HEMTs on Si illustrate their suitability for addressing specific RF application scenarios, including portable communication devices, wireless sensor networks and so on.