铜掺杂CdS量子点在太阳能电池应用中光伏性能的增强

The successive ionic layer adsorption and reaction technique was employed to deposit copper (Cu) at different concentrations into cadmium sulfide (CdS) quantum dots (QDs) on a TiO 2 -coated fluorine-doped tin oxide (FTO) substrate. The successful deposition and doping of copper were verified through powder X-ray diffraction analysis, which confirmed the distinct peaks of CdS, TiO 2 , and FTO, and elemental mapping and analysis showed the distribution of copper within the CdS QDs. The optical band gap of the un-doped and Cu-doped CdS samples was determined, revealing changes in the electronic properties upon Cu-doping. Photovoltaic performance analysis demonstrated that un-doped CdS QDs exhibited an efficiency ( η ) of 0.43%, while the Cu-doped CdS QDs achieved significantly improved results, with the 5 mM% Cu-doped CdS QDs showing a remarkable efficiency ( η ) of 1.59%, a short circuit current density ( J sc ) of 3.62 mA/cm 2 , an open circuit voltage ( V oc ) of 0.74 V, and a fill factor of 59.5%. The ideality factor ( n ) and barrier height ( Φ b ) were calculated based on the current–voltage ( I – V ) properties, revealing the influence of Cu-doping on the electrical characteristics of the cells. This work presents a novel approach to enhancing the performance of CdS-based photovoltaic devices by copper doping, demonstrating significant improvements in efficiency and offering valuable insights for the development of more efficient quantum dot-sensitized solar cells. The findings suggest potential applications in next-generation solar technologies, where improving the efficiency of CdS-based materials can contribute to more cost-effective and high-performance devices.