功率密度对恒定厚度溅射ZnO:Ga薄膜的影响

The deposition of ZnO:Ga (GZO) thin films on glass substrates at room temperature was carried out using RF magnetron sputtering. The dependence of GZO thin films on RF power density was observed. As the RF power density increased from 0.45 to 2.4 W/cm 2 , crystallinity, resistivity, and transmittance of GZO thin films deteriorated from 824 to 149 cps/deg., from 1.85 × 10 −3 to 20.8 × 10 −3 Ω-cm, and from 87.8 to 85.7%, respectively. However, there is no consistent trend in chemical bonding properties such as Ga content, oxygen vacancies, and surface bonding. This result is believed to be due to the increased surface collision effect of the sputtering species caused by the constant thickness. At a constant thickness, the surface collision effect of sputtering species seems to be more influential than the surface mobility effect. Therefore, when the surface collision effect of sputtering species is high, the structural properties have a greater influence on electrical and optical properties more than chemical bonding properties. The surface collision suppression of sputtering species at constant thickness is the most important factor to obtain good electrical properties.