用于超高电流和热性能功率IGBT的压接式封装

In this article, the press pack packaging for power insulated gate bipolar transistors (IGBTs) with extremely high current and thermal performance is proposed to meet the power and reliability requirement of the high voltage direct current (HVDC) system. A new structure D-type PP IGBT that combines the advantages of P-type and S-type PP IGBTs to improve the current and reliability is proposed. Fin...