通过瞬态热特性分析理解GaN HEMT在短路应力下的位错缺陷作用

Gallium nitride (GaN) high electron mobility transistor (HEMT) devices are prone to rapid failure after repetitive short-circuit (SC) stress under high bus voltage conditions. The dislocation defects at the substrate interface play a critical role in inducing device degradation and thermal breakdown failure. However, the mechanisms of dislocation defect formation under SC stress and their influenc...