基于二维电荷分布的IGBT建模与分析

This article presents an enhanced physical SPICE model for insulated gate bipolar transistor (IGBT) modules, grounded in a two-dimensional charge distribution. The model accurately delineates the lateral charge distribution under both static conduction and transient conditions, providing a precise representation of the PNP and PIN components of the IGBT. The improved model more effectively describ...