利用辅助发射极电压原位监测多芯片IGBT功率模块焊层退化

Asymmetric chip placement and initial die-attach defects within a multichip IGBT power module (MIPM) can cause uneven junction temperature distribution and further accelerate the solder layer degradation. This is one of the main factors which affect the performance and reliability. This study uses the auxiliary emitter voltage veE to indirectly measure the turn-on delay time and the maximum rate o...