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基于SiC的兆赫兹级ZVS谐振变换器驱动快速可变负载:以电感耦合等离子体为例

SiC-Based Resonant Converters With ZVS Operated in MHz Range Driving Rapidly Variable Loads: Inductively Coupled Plasmas as a Case of Study

语言:

中文摘要

本文探讨了宽禁带半导体在兆赫兹(MHz)频率下实现零电压开关(ZVS)的谐振变换器技术。研究表明,在3MHz频率下可实现高达25kW的功率转换,效率约为94%。该技术解决了中高频段功率变换效率低下的难题,为高频电力电子应用提供了高效解决方案。

English Abstract

Wide band-gap resonant converters operating with zero voltage switching (ZVS) recently proved the conversion of up to $25 \,\mathrm{k}\mathrm{W}$ at $3 \,\mathrm{M}\mathrm{Hz}$ with an efficiency of $\approx$$94 \%$. This is of special interest for any application where power in middle frequency range is required since typically achieved efficiencies for those frequencies are in the range of $60\%...
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SunView 深度解读

该技术展示了SiC器件在超高频(MHz)功率变换中的巨大潜力。对于阳光电源而言,虽然目前主流光伏逆变器和储能PCS(如PowerTitan系列)多工作在数十kHz量级以平衡效率与成本,但该研究对未来提升功率密度、减小磁性元件体积具有重要参考价值。建议研发团队关注SiC在高频化下的驱动电路设计与EMI抑制技术,这可为下一代轻量化户用逆变器或小型化充电桩模块提供技术储备,助力产品进一步实现极致的功率密度提升。