混合SiC-Si直流-交流拓扑：SHEPWM Si-IGBT主单元处理高功率，集成部分功率SiC-MOSFET从单元以提升性能

Based on partial power conversion concept, this article proposes a hybrid silicon carbide (SiC)-silicon (Si) dc–ac topology to improve performance in high power application. First, master unit (MU) uses Si-IGBT working in low frequency to handle main high power because of its high rated current capacity and high switching loss, whereas the low power quality of MU is induced by the low switching fr...