一种由SiC和Si混合功率级组成的高效率三电平有源中点钳位变换器

Three-level converters typically feature low switching loss and small filter size. In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extremely high total cost. In this paper, a SiC MOSFET and Si device hybrid active neutral-point-clamped...